The fabrication of low leakage junction with ultra shallow profile by the combination annealing of 10-ms low power and 2-ms high power FLA

We propose the suitable FLA method for pFET device activation by using flexibly-shaped-pulse FLA (FSP-FLA). For the activation annealing by FLA on B without pre-amorphous implantation (PAI) process, increase in preheat temperature before flash is the most effective. By using FSP-FLA, ∼1000 °C 10-ms preheat was performed. It achieves very shallow and high activated junction without PAI equivalently to that by the conventional FLA with PAI. By using the FSP-FLA without PAI, drastically reductions of the junction leakage (JL) both of p- and nFET were achieved.