Nonvolatile solid-electrolyte switch embedded into Cu interconnect

A solid-electrolyte switch (ldquoNanoBridgerdquo) has been successfully embedded into a 0.13-mum-node dual-damascene Cu interconnect using a highly reliable bilayer solid-electrolyte (TaSiO/Ta
₂
O
₅
) and a thin oxidation barrier, resulting in an excellent ON/OFF ratio (> 10
⁹
) at a low ON resistance of 50Omega. The newly developed bilayer solid-electrolyte has improved the thermal stability during the BEOL process as well as improved electrical breakdown. The CMOS compatible NanoBridge is a promising switch to achieve high-performance and low-cost programmable LSIs.