Abstract:
Vertically defined resistance change memory cells for the vertical cross-point architecture (VCPA) as a high density non-volatile memory application are successfully demo...Show MoreMetadata
Abstract:
Vertically defined resistance change memory cells for the vertical cross-point architecture (VCPA) as a high density non-volatile memory application are successfully demonstrated with a NiO switching layer. They showed both unipolar and bipolar switching mode. Several issues in realization for VCPA and their possible solutions are discussed.
Published in: 2009 Symposium on VLSI Technology
Date of Conference: 15-17 June 2009
Date Added to IEEE Xplore: 11 August 2009
Print ISBN:978-1-4244-3308-7
ISSN Information:
Conference Location: Kyoto, Japan
Contents 