High velocity Si-nanodot : A candidate for SRAM applications at 16nm node and below

We report a new nanodot MOSFET, based on the use of Bulk wafer and Silicon-On -Nothing technology, requiring neither CMP nor extra photo-lithographic step. SRAM-application oriented nanodot devices were fabricated using this new process. Record performance among the nanometric gate-all-around MOSFET state-of-the-art is obtained thanks to a high quality transport.