Performance breakthrough in NOR flash memory with dopant-segregated Schottky-barrier (DSSB) SONOS devices

A novel dopant segregated Schottky barrier (DSSB) SONOS device as a form of double-gate (DG) is demonstrated for NOR Flash memory applications. The DSSB also applies to all-around-gate (AAG) SONOS devices. The source side injection caused by sharp energy band bending in the DSSB device results in a high-speed programming (V
th
shift of 4.2V @ 320ns) at a low program bias (V
gs
/V
ds
=7V/3V). Moreover, faster program speed in a narrower fin width (W
fin
) due to its low parasitic resistance and enhanced gate controllability is achieved. Drain disturbance-free characteristics in a programmed cell are confirmed as well.