Loading [a11y]/accessibility-menu.js
Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NAND flash memory | IEEE Conference Publication | IEEE Xplore

Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NAND flash memory


Abstract:

Vertical NAND flash memory cell array by TCAT (Terabit Cell Array Transistor) technology is proposed. Damascened metal gate SONOS type cell in the vertical NAND flash str...Show More

Abstract:

Vertical NAND flash memory cell array by TCAT (Terabit Cell Array Transistor) technology is proposed. Damascened metal gate SONOS type cell in the vertical NAND flash string is realized by a unique ‘gate replacement’ process. Also, conventional bulk erase operation of the cell is successfully demonstrated. All advantages of TCAT flash is achieved without any sacrifice of bit cost scalability.
Date of Conference: 15-17 June 2009
Date Added to IEEE Xplore: 11 August 2009
Print ISBN:978-1-4244-3308-7

ISSN Information:

Conference Location: Kyoto, Japan

Contact IEEE to Subscribe

References

References is not available for this document.