Abstract:
Vertical NAND flash memory cell array by TCAT (Terabit Cell Array Transistor) technology is proposed. Damascened metal gate SONOS type cell in the vertical NAND flash str...Show MoreMetadata
Abstract:
Vertical NAND flash memory cell array by TCAT (Terabit Cell Array Transistor) technology is proposed. Damascened metal gate SONOS type cell in the vertical NAND flash string is realized by a unique ‘gate replacement’ process. Also, conventional bulk erase operation of the cell is successfully demonstrated. All advantages of TCAT flash is achieved without any sacrifice of bit cost scalability.
Published in: 2009 Symposium on VLSI Technology
Date of Conference: 15-17 June 2009
Date Added to IEEE Xplore: 11 August 2009
Print ISBN:978-1-4244-3308-7
ISSN Information:
Conference Location: Kyoto, Japan
Contents 