Abstract:
Vertical Gate NAND (VG-NAND) Flash array with multi-active layers has been successfully integrated for the first time. VG-NAND confirmed stable operations of program, bod...Show MoreMetadata
Abstract:
Vertical Gate NAND (VG-NAND) Flash array with multi-active layers has been successfully integrated for the first time. VG-NAND confirmed stable operations of program, body erase, and read. There is no aggravation on program disturbance with increased number of layers due to an architecture of VG-NAND with vertical blocks.
Published in: 2009 Symposium on VLSI Technology
Date of Conference: 15-17 June 2009
Date Added to IEEE Xplore: 11 August 2009
Print ISBN:978-1-4244-3308-7
ISSN Information:
Conference Location: Honolulu, HI
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