Low Transparency Current Density and Low Internal Loss of 1060-nm InGaAs Laser With GaAsP–GaAs Superlattices as Strain-Compensated Layer

In this letter, the strained In
_0.22
Ga
_0.78
As-GaAs single quantum-well lasers grown by metal-organic vapor phase epitaxy were studied. The lasing wavelength of the fabricated InGaAs laser was 1056 nm, whereas the internal loss (alpha
_i
) and the transparency current density (J
_tr
) were 1.78 cm
^-1
and 40.2 A/cm
²
, respectively. By using the GaAsP-GaAs superlattices as strain-compensated layer, the lasing wavelength was 1052 nm, and the alpha
_i
and J
_tr
could be reduced to 0.63 cm
^-1
and 39.1 A/cm
²
, respectively. To the best of our knowledge, the J
_tr
was the lowest among the reported InGaAs lasers around 1060 nm.