Vertical-cavity surface-emitting-lasers with 21% efficiency by metalorganic vapor phase epitaxy

We have demonstrated vertical-cavity top-surface-emitting InGaAs QW lasers by metalorganic vapor phase epitaxy that set record cw performance marks of 21% power conversion efficiency, 1.47 V threshold voltage, 23 mW output power, and 3.7 mW single-mode output power. The enhanced laser performance relies on novel mirror designs and benefits of metalorganic vapor phase epitaxy.