ULtrafast dynamics of band-edge two- dimensional III–V semiconductor photonic crystal lasers

In the domain of information and communication technology, all-optical devices will most certainly play an important role in the coming decade due to their ability to bring efficient solutions to data transmission and processing. In this context, two-dimensional photonic crystals (2DPCs) have excited a lot of interest for their potential use as active photonic devices. PCs are a periodic arrangement of materials with different refractive indices where the periodicity is of the order of the wavelength of light which confers them with exciting possibilities to manipulate light signals within small volumes of materials. In wavelength sized structures, three parameters: the cavity quality factor Q, the volume of the resonator and the spontaneous emission rate, the β factor may be manipulated to obtain a variety of impressive performances in terms of laser threshold, compactness and speed [1,2]. In this work, we have fabricated an InP-based 2DPCs laser [3] bonded with Silicon and explored its temporal capabilities.