Application of the flip-chip bonding technique to the 10 Gbps laser diode module

Flip chip bonding technique using Pb/In solder bumps was applied to packaging a 10 Gbps laser diode (LD) submodule for high-speed optical communication systems. Dependence of parasitic parameters on the small signal modulation bandwidth of the LD submodule was investigated through SPICE simulations. Experimentally, a small signal modulation bandwidth of 14 GHz at 100 mA dc bias current and the clean modulation response up to 20 GHz were obtained in the flip-chip bonded LD submodule, which was wider than that of the wire-bonded 10 Gbps LD submodule by a difference of 3.8 GHz.