Statistical retention modeling in floating-gate cell: ONO scaling

The simulation study of the ONO gate stack scaling, which includes the Monte-Carlo statistical analysis of time-dependent Vth distribution and SILC is performed. Leakage through both tunneling and blocking oxide is taken into account including multi-trap tunneling paths. Exact 50 nm floating-gate cell structure is used instead of simple 1D stack for modeling and comparison with experimental data. Analysis of the influence of trap parameters on scaling trends is given.