Advanced plasma doping technique for USJ

SDE implants were carried out in a VIISta PLAD system using both p- and n-type dopant precursors. The advanced control features in the PLAD system allowed for dopant profile control by appropriately balancing the constituent components of the plasma doping process, and retrograde dopant profiles were demonstrated for the first time using a plasma doping system. The p-doped samples were flash annealed, and fully re-crystallized. The achieved profile abruptness, and combination of sheet resistance and junction depth exceeded the ITRS requirements for the 32 nm technology node. The technique was extended to n-type USJ.