Electron holography for 2-D dopant profiling

We have demonstrated that off-axis holography can be realized in TEM and applied to 2-D quantitative analysis of p-n junctions in submicron devices. Examples of the recent work showed that millisecond laser anneal does not cause lateral diffusion of As extension implant in n-FET devices. The reduction of potential variation across depletion region in n-FET devices with carbon co-implant was directly observed. In combination with the SIMS data it is attributed to suppression of Boron halo diffusion. The short channel device characteristics can be improved if carbon co-implant is used.