An 8 – 18 GHz wideband SiGe BiCMOS low noise amplifier

In this paper, an 8 – 18 GHz wideband low noise amplifier (LNA) with an active balun fabricated in a 0.13-µ m SiGe BiCMOS technology was presented. The LNA achieves 16-dB of gain with 1.5 dB variation over the 8GHz to 18 GHz frequency band and a matched input with less than −9 dB of reflection. The minimum noise figure (NF) is 5 dB at 8GHz and increases to 6 dB at 18GHz. The measured IIP3 is −15-dBm with 17 mA total current consumption from 2.2V supply.