The dependence of GaN HEMT's frequency figure of merit on temperature

This study presents extensive thermal characterization of GaN/SiC devices from five US sources across temperature (-25degC to +125degC). The changes with temperature for: cutoff frequency (f
_t
), maximum oscillation frequency (f
_max
), saturated current (I
_dss
), transconductance (g
_m
) are measured, statistics studied, and correlations investigated. Temperature-coefficients are established for f
_t
, f
_max
, I
_dss
, and g
_m
in GaN technology. The results obtained provide MMIC designers with key information required for meeting temperature specifications.