Analytical modeling of Accumulation-Mode Suspended-Gate MOSFET and process challenges for very low operating power devices

For the first time, an analytical model of an Accumulation-Mode Suspended-Gate MOSFET is proposed. For very low power operation, adhesion energies of gate and gate oxide as low as 130 muJ/m
²
are required as well as sub-2.3 N/m doubly clamped gate. Experimentally a 0.2 N/m suspended silicon nanowire was processed, opening perspectives for device downscaling.