A novel driving technology for a passive gate on a Lateral-IGBT

This paper presents a novel technology for automatic driving of the passive PMOS to improve a Lateral-IGBT switching performance. Though the former technology, which we had introduced, has very simple driving circuitry, it still needs some additional process or structural change. The novel technology eliminates these remained problems without decrease in device performance. Simulation results indicate advantage of the novel technology in total performance compared with results of the former technology. Besides, experimental results of the prototype IPD with the novel technology have indicated improved switching performance distinctly.