A lateral SOI BMFET with high current gain

A new lateral SOI BMFET, which has a lateral JFET structure with a channel formed between a buried oxide and a p/sup +/ gate junction, is proposed and verified by numerical simulation. It is shown that the normally-off characteristics and the current gain are changed by the potential barrier of the channel region, which is controlled by the buried oxide thickness and the substrate dopant type as well as the channel geometry and the doping concentration of the n drift region. Higher breakdown voltage and larger current gain are obtained in the range of high drain current by introducing a low-resistivity n layer in the drift region.