New MOS-gate controlled thyristor (MGCT)

A new three-terminal power device structure called the MOS-Gate Controlled Thyristor (MGCT) is described. The device consists of a thyristor structure with the thyristor current constrained to flow via the channel region of an enhancement-mode MOSFET. This allows limiting of the thyristor current by the MOSFET. The new structure does not have any parasitic thyristor structure. Multi-cell MGCT devices fabricated along with IGBT devices on the same wafer showed about 20% improvement in on-state voltage drop over IGBT for 750 V devices.