Evaluation of 0.18 micron ultra-shallow doping technologies: a SEMATECH/university/industry cooperative research effort

The SEMATECH 0.18 micron Source/Drain (S/D) project is targeted toward the development of a doping tool that will meet the requirements for ultra-shallow junction depth, cost, and reliability. Cooperative research efforts are directed toward evaluating the feasibility of forming ultra-shallow junctions by three competing methods: (1) conventional ion implantation, (2) plasma source ion implantation, and (3) Projection-Gas Immersion Laser Doping (P-GILD). The results of this effort will be used to assist SEMATECH in making its 0.18 micron doping technology decision. This paper gives a description of the SEMATECH/University/Industry cooperative program and of the recent results obtained from the various research groups.