Precise measurement of P-N junction leakage current generated in Si subsurface

We present a new method of measuring junction leakage current generated only in the subsurface of the silicon substrate. In this method, diffusion current from deep in the bulk silicon is blocked, so the peripheral component of the junction leakage current was measured accurately, even at elevated temperatures. Using this new test device, we concluded that the leakage current generated in a denuded zone of Czochralski-grown Si is as small as that for an epitaxial layer.