Reliability purge test of SAGCM InGaAs/InP APDs

The purpose of this paper is to propose a high reliability purge condition for separate absorption, grading, charge, and multiplication (SAGCM) InGaAs/InP avalanche photodiodes (APDs) for fiber optical transmission systems. We have found that infant failures of the InGaAs/InP APDs can be purged out by applying 90% of the reverse breakdown voltage at an ambient temperature of 100/spl deg/C for a minimum of 6 hours. The physical mechanism of the infant failures is a positive interfacial trapped charge causing decrease in breakdown voltage and an increase in dark current.