A Ku-band ultra super low-noise pseudomorphic heterojunction FET in a hollow plastic PKG

This paper reports Ku-band ultra super low-noise pseudomorphic heterojunction FETs (pHJFETs) in a newly developed hollow plastic package. To achieve higher performance of pHJFETs, we employed further optimized epilayer structure with good interfacial quality. The developed packaged HJFETs with 0.17 um T-shaped gate exhibited extremely low noise performance of 0.35 dB typical noise figure with 12.5 dB associated gain at 12 GHz.