A systems approach to electromigration prevention in bipolar integrated circuits

A rigorous statistical technique is presented for properly modeling the design rules for the maximum current density permitted to pass through the interconnecting metal of an integrated circuit. The electromigration model includes consideration of the circuit's overall manufacturing and systems environment. Process variables, assembly variables, and variations in the system's electrical and thermal environment are statistically accounted for when determining current density limits in the metallization. This assures that the reliability requirements of the circuit are met.<
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