Evaluation of GaAs low noise and power MMIC technologies to neutron, ionizing dose and dose rate effects

An evaluation programme of Thomson CSF-TCS GaAs low noise and power MMIC technologies to 1 MeV equivalent neutron fluence levels, up to 1/spl times/10/sup 15/ n/cm/sup 2/, ionizing 1.17-1.33 MeV Co/sup 60/ dose levels in excess of 200 Mrad(GaAs) and dose rate levels reaching 1.89/spl times/10/sup 11/ rad(GaAs)/s is presented in terms of proper components and parameter choices, DC/RF electrical measurements and test methods under irradiation. Experimental results are explained together with drift analyses of electrical parameters that have determined threshold limits of component degradations. Modelling the effects of radiation on GaAs components relies on degradation analysis of active layer which appears to be the most sensitive factor. MMICs degradation under neutron fluence was simulated from irradiated FET data. Finally, based on sensitivity of technological parameters, rad-hard design including material, technology and MMIC design enhancement is discussed.