A new approach to the analysis of SEU and SEL data to obtain the sensitive volume thickness [ICs]

It is proposed to use short-range ions (along with long-range ions) to obtain the thickness of the sensitive volume, d, and the SEU (single event upset) and SEL (single event latchup) cross sections vs the energy deposited in this volume, /spl sigma//sub ion/(/spl epsi/). These /spl sigma//sub ion/(/spl epsi/) and d can be used for calculating the proton induced cross sections /spl sigma//sub p/. A study of the HM65162 CMOS SRAM demonstrates this method. The calculated /spl sigma//sub p/ is in good agreement with the experimental /spl sigma//sub p/.