Influence of Cl doping in the optical and electrical properties of ZnSe grown by molecular beam epitaxy

Using ZnCl/sub 2/ as a doping source, we have grown epitaxial layers of Cl-doped ZnSe onto GaAs substrates by molecular beam epitaxy (MBE). The maximum carrier concentration obtained was 1.2 10/sup 19/ cm/sup -3/. An increase in the deep level emission was observed in the photoluminescence (PL) spectra of highly doped samples. By deep level transient spectroscopy (DLTS) measurements four electron traps with energy levels of Ec=0.50, 0.68, 0.74 and 1.20 eV were detected.