Novel HEMT structures for mixer applications

We present two new and original HEMT structures. They have been designed and realized for gate mixer applications. The first HEMT has a decoupling capacitor between the drain and the source. The integrated capacitor acts as a low-pass filter. The second HEMT presents a very nonlinear transconductance profile. The IF signal is provided by the mixing of the RF signal and the second harmonic of the LO signal. Thus, the required LO frequency is divided by 2.