Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices

In this work, the k·p method is used to calculate the electronic subband structure. To reduce the computational cost of the carrier concentration calculation and henceforth the required number of numerical solutions of the Schrodinger equation, an efficient 2D k-space integration by means of the Clenshaw-Curtis method is proposed. The suitability of our approach is demonstrated by simulation results of Si UTB double gate nMOS and pMOS devices.