Effect of Arbitrary Orientation and Strain on Surrounding Gate Transistors

A variety of techniques can be employed to increase the drive current in CMOS transistors. In this paper, we study the effects of using different wafer orientations and strain methods in surrounding gate transistors. Specifically, we focus on quantum electron density and mobility. A significant modification of both magnitudes is to be expected, due to the changes caused in the effective mass tensor and in the conduction band edge position.