Single step PVD planarized aluminum interconnect with low-/spl epsiv/ organic ILD for high performance and low cost ULSI

Single step PVD planarized Al interconnect using low-/spl epsiv/ (/spl epsiv/<3) material as ILD has been fabricated for high performance and low cost ULSI. Completely filled Al plugs with vertical side-wall were fabricated in organic low-/spl epsiv/ ILD for the first time. Up to 40% interconnect wiring capacitance reduction, low via resistance with via size down to 0.35 /spl mu/m, good interconnect reliability and low process cost have been achieved.