Advanced ion implantation and rapid thermal annealing technologies for highly reliable 0.25 /spl mu/m dual gate CMOS

Advanced ion implantation and rapid thermal annealing technologies are proposed to realize highly reliable 0.25 /spl mu/m salicided dual gate CMOS for high performance logic application. These technologies mainly consist of mixing the CoSi/sub 2//Si interface using silicon implantation, CVD-Si/sub 3/N/sub 4//CVD-SiO/sub 2/ sidewall spacer, nitrogen implantation in gate polysilicon and source/drain regions and rapid thermal annealing (RTA) for reduction of thermal budget.