New erase scheme suitable for low power flash memory application

A novel erasing method utilizing avalanche hot-electron injection for low power flash memory applications is proposed and investigated. In this new bias scheme, a single internally pumped voltage (<10 V) uniformly charges up an array of cells in 0.5 sec at a current level less than 1 nA per cell. The array exhibited minimal degradation after cycling to beyond 100 K. In addition to providing superior flash reliability, this new bias scheme is suitable for low power application.