A 3-10GHz Low-Noise Amplifier Using Resistive Feedback in SiGe HBT Technology

This paper presents a SiGe HBT low noise amplifier (LNA) using resistive feedback scheme for ultra-wideband (UWB) applications. This amplifier is implemented in 0.35 um SiGe process and is unconditionally stable. The simulated results show the LNA has over 21 dB gain with less than 1 dB variation over 3-10 GHz. The matched input and output reflection are all less than -10 dB. The noise figure is 4.03 dB at 3 GHz and increases to 4.85 dB at 10 GHz, which is good enough for the resistive feedback LNA.