A new FET-based integrated circuit technology: the SASSFET

The super self-aligned submicron single-metal FET (SASSFET), a FET-based integrated circuit technology suitable for fabrication of high-speed GaAs and InP circuits, is demonstrated. With nonalloyed source and drain contacts realized by MOCVD regrowth, the SASSFET is a uniform, dense, selfaligned, single-metal technology that achieves submicron dimensions with optical lithography. A 0.4 μm gate length junction HFET fabricated with the SASSFET technology has a transconductance of 380 mS/mm and a good high-frequency performance with f/sub /spl tau// of 45 GHz and f
_max
of 80 GHz.