Vacuum ultraviolet-induced and enhanced oxidation of Si and GaAs in N/sub 2/O

We present a low temperature photo (VUV) enhanced oxidation technique to grow ultra thin dielectric films on Si and GaAs in nitrous oxide (N/sub 2/O) ambient at low substrate temperature (<500 /spl deg/C). There is a sharp increase in the oxidation rate of Si and GaAs under VUV irradiation. Auger electron spectroscopy and X-ray photoelectron spectroscopy are used to monitor film composition. The subcutaneous oxidation due to VUV radiation (/spl lambda/=110-180 nm) relies on a non-thermal mechanism of light enhancement and reactivity of oxidizing species.