Low-leakage InAS/AlSb HEMT with high FT-LG product

Conventional InAs/AlSb HEMTs suffer high gate leakage and incomplete pinch-off issues due to instable chemical property of the AlSb and GaSb materials though their excellent performance and circuit application have already been demonstrated. Based on the concerns, we proposed a two-step passivation process for minimizing the negative effect based on developed high-quality InAs/AlSb HEMT materials by solid-source molecular beam epitaxy. Improved device performance is observed.