Lateral current injection type GaInAsP/InP DFB lasers on SI-InP substrate

Toward injection type GaInAsP/InP membrane lasers consisting of high index contrast waveguide structure, lateral current injection type distributed-feedback lasers on a semi-insulating InP substrate were realized by an electron-beam lithography and organo-metallic vapor-phase-epitaxial regrowth. Single mode operation with a threshold current of 27 mA and a side-mode suppression ratio of 35dB at a bias current of two times the threshold was obtained at room temperature pulsed condition.