Source/drain formation by using epitaxial regrowth of N+InP for III–V nMOSFETs

Defect-free n-type InP source/drain for III–V nMOSFETs was successfully formed by epitaxial regrowth at 610 °C. The impurity concentration of 1×10
¹⁹
cm
⁻³
with the S/D junction steepness of around 10 nm/dec. was obtained.