Electronic transport properties of disordered quantum interference transistor

We examine the quantum-mechanical transmission and I-V characteristics of real T-shape quantum interference resonator, with two basic types of disorder-impurities and rough boundaries. This system is interesting as a potential quantum transistor. The elastic scattering due to disorder, in general, decreases the conductance in comparison to the perfect system. However, we find that this behavior can be avoided in the single-mode regime, and the transmission could be even enhanced by the presence of repulsive impurity potential or boundary roughness. Disorder decreases the drain current in general, but it is useful in the switching regime because it enhances the separation between ON and OFF states. Therefore, the transistor switching function could be preserved in the single-mode regime even for the disordered samples.