Current test for CMOS early failures screening

This paper discuss two methodologies for screening potential VLSI CMOS infant mortality failures, caused ether by the in-circuit components or the overall circuit performance degradation. The first is based on the direct input/output buffers leakage testing, the second employs the power supply current measurement, while no internal node states are toggling. Experimental data, showing strong correlation between rejected devices and early failure rate reduction is demonstrated. Finally, early failure screening technique, efficient both in cost ant time, utilizing existing test equipment is suggested for production testing as well as for process reliability monitoring.