Gate oxide conductivity of polysilicon thin film transistors

Conductivity investigations of thin film oxides grown on polysilicon are presented. It is shown that hydrogenation of underlined polysilicon with ion implantation of hydrogen through gate oxide layers essentially influence the oxides conductivity. In comparison with nonimplanted oxides, a few volts higher gate voltages for increased current injection and for higher Fowler-Nordheim effective tunneling barriers are obtained.