New Trends in Signal Corps Transistor Development

Signal Corps transistors are discussed with special emphasis on device developments during the last five-year period, A generic development is presented starting with germanium and silicon alloy-junction transistors and leading to germanium and silicon diffused junction-type devices that reflect the extended frequency and power capability of the transistor. Devices developed under Signal Corps contracts are described and the importance of these new transistors for military and industrial use is illustrated. In addition, a graphic picture of the growth of the Signal Corps developments is included.