Integration of a novel high-voltage Giga-Hertz DMOS transistor into a standard CMOS process

A new type of DMOS transistor aimed at high voltage power amplifications in the Giga-Hertz region is integrated into a standard CMOS process. By optimising the design for high voltage and high frequency, remarkable good electrical behaviour is obtained. The frequency performance was measured to f/sub T/=4.6 GHz and f/sub MAX/=10 GHz for a device with a channel length of 0.3 /spl mu/m and a breakdown voltage V/sub BR//spl ges/60 V. For a similar device fabricated on the same chip and using the same process flow, but designed to handle voltages above 300 V, f/sub T/=1.8 GHz and f/sub MAX/=3.2 GHz were measured.