High voltage BiCDMOS technology on bonded 2 /spl mu/m SOI integrating vertical npn pnp, 60 V-LDMOS and MPU, capable of 200/spl deg/C operation

Trench isolated 60 V BiCDMOS processes on bonded 2 /spl mu/m thick SOI, capable of integrating 60 V low on-resistance lateral DMOS, vertical npn and pnp, and an MPU have been developed. 200/spl deg/C high temperature operation has been demonstrated. The processes are completely compatible with the conventional 0.8 /spl mu/m rule CMOS processes, and are capable of integrating any existing library of MPUs, logic and analog circuits together with 6O V DMOS H bridges.