The effect of source/drain processing on the reverse short channel effect of deep sub-micron bulk and SOI NMOSFETs

This study presents a systematic investigation of the effects of source/drain processing on the reverse short channel effect (RSCE) and is the first to demonstrate significant differences in the electrical behavior of identically processed silicon-on-insulator (SOI) and bulk devices due to dopant diffusion kinetics. In bulk and SOI devices, the RCSE due to implantation damage enhanced diffusion is minimized if a high temperature rapid thermal anneal follows the source/drain implantation. The magnitude of the V/sub th/ roll-up is significantly smaller in SOI than in bulk. When arsenic concentrations greater than 2.5/spl times/10/sup 20/ cm/sup -3/ are used, arsenic deactivation enhanced diffusion can cause a significant increase in V/sub th/ rollup.