Characterization and modeling of hot-carrier luminescence in silicon n/sup +//n/n/sup -/ devices

In this paper, physically-based two-dimensional simulations of the spectral distribution of hot-carrier induced luminescence are compared with extensive experimental data obtained with special purpose n/sup +//n/n/sup -/ test structures that demonstrate field profiles similar to real MOSFETs without the obscuring effects of a gate electrode. The luminescence model is conceived as a post-processor of a full band Monte Carlo simulator, and it incorporates all relevant emission mechanisms. Good agreement between measured and simulated data is observed over wide channel length and bias ranges, for the first time providing a direct verification of simulated carrier energy distributions (CEDs) in a MOSFET-like environment.