60 GHz MMIC mixer using a dual-gate PM HEMT

A Dual-Gate PM HFET monolithic mixer has been developed, fabricated and measured at 60 GHz. This circuit uses a 0.15 /spl mu/m gate length AlGaAs/InGaAs/GaAs pseudomorphic HEMT technology. The design optimization is performed from a complete extraction method of the dual-gate device and a non-linear electrical modeling. The mixer has a maximum conversion gain of -5 dB, a minimum noise figure of 11 dB at 5 dBm LO power, an output IMP3 of -2 dBm and a LO to RF isolation close to 35 dB.