Studies on reducing leakage current of large-area silicon PIN microstrip sensors-methods to prevent implantation damage

Several 8/spl times/4 cm/sup 2/ single-sided silicon microstrip sensors with capacitor coupling and polysilicon bias resistors have been fabricated by using planar technology. Sirtl etch analysis revealed that the leakage current was caused by implantation damage. A boron solid source predeposition process has been developed to replace the p/sup +/ strip implantation. Several anneal technologies have been studied to remove the implantation damge. The prototype sensors have been tested at the CERN SPS area. Test results showed that such a sensor is feasible.